Sledziewski T, Ellrott G, Rösch W, Weber HB, Krieger M (2015)
Publication Type: Journal article
Publication year: 2015
Publisher: Trans Tech Publications Ltd
Book Volume: 821-823
Pages Range: 347-350
ISBN: 9783038354789
DOI: 10.4028/www.scientific.net/MSF.821-823.347
We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2 defect with increasing dose of implanted germanium.
APA:
Sledziewski, T., Ellrott, G., Rösch, W., Weber, H.B., & Krieger, M. (2015). Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC. Materials Science Forum, 821-823, 347-350. https://doi.org/10.4028/www.scientific.net/MSF.821-823.347
MLA:
Sledziewski, Tomasz, et al. "Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC." Materials Science Forum 821-823 (2015): 347-350.
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