Behrens T, Suenner T, Geinitz E, Schletz A, Frey L (2013)
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2013
Pages Range: 801-804
Event location: St. Petersburg
ISBN: 9783037856246
DOI: 10.4028/www.scientific.net/MSF.740-742.801
While aluminum-based metallization schemes on Si have been optimized for the last decades, only few investigations have been done on copper metallization with SiC-devices. Thus, in this work the mechanical as well as the electrical interactions of this metallization system have been analyzed and optimized for SiC-devices in high reliability applications. For optimizing the adhesion of the copper metallization stack on SiC devices, different metallization schemes consisting of adhesion promoters (Ti, Cr, Al, Ta, WTi), diffusion barriers (TiN, Ta, WTi), and the final copper layer have been tested by peel-tests. For investigating the electrical interactions TLM measurements as well as leakage-current measurements have been done on copper metalized SiC samples. © (2013) Trans Tech Publications, Switzerland.
APA:
Behrens, T., Suenner, T., Geinitz, E., Schletz, A., & Frey, L. (2013). Optimization of copper top-side metallization for high performance SiC-devices.
MLA:
Behrens, Tim, et al. Optimization of copper top-side metallization for high performance SiC-devices. 2013.
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