Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi

Noll S, Scholten D, Grieb M, Bauer A, Frey L (2013)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2013

Pages Range: 521-524

Event location: St. Petersburg

ISBN: 9783037856246

DOI: 10.4028/www.scientific.net/MSF.740-742.521

Abstract

In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We found that higher annealing temperatures significantly reduce the trap density in the lower bandgap, and as a consequence the threshold voltage drift of the transistor after negative stress is reduced. © (2013) Trans Tech Publications, Switzerland.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Noll, S., Scholten, D., Grieb, M., Bauer, A., & Frey, L. (2013). Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi.

MLA:

Noll, Stefan, et al. Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi. 2013.

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