Häublein V, Temmel G, Mitlehner H, Rattmann G, Strenger C, Hürner A, Bauer A, Ryssel H, Frey L (2013)
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2013
Pages Range: 887-890
Event location: St. Petersburg
ISBN: 9783037856246
DOI: 10.4028/www.scientific.net/MSF.740-742.887
N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The comparison of the devices includes output and transfer characteristics, blocking characteristics, and temperature behavior. © (2013) Trans Tech Publications, Switzerland.
APA:
Häublein, V., Temmel, G., Mitlehner, H., Rattmann, G., Strenger, C., Hürner, A.,... Frey, L. (2013). Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC.
MLA:
Häublein, Volker, et al. Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC. 2013.
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