Koval Y, Lazareva I, Müller P, Müller K, Schmeisser D (2009)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2009
Book Volume: 105
Article Number: 054110
Journal Issue: 5
DOI: 10.1063/1.3088887
We investigated the imprint effect in ferroelectric capacitors and field effect transistors (FETs) with a poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric insulator. The shift in switching voltages and the change in the ferroelectric FET (FeFET) channel conductance were measured as a function of time and the thickness of the ferroelectric layer. Analyzing our experimental data, we show that the imprint originates from interface-induced processes, which effectively screen polarization charges in P(VDF-TrFE). This phenomenon significantly influences the retention of FeFET channel conductance and the memory functionality of FeFET with P(VDF-TrFE). © 2009 American Institute of Physics.
APA:
Koval, Y., Lazareva, I., Müller, P., Müller, K., & Schmeisser, D. (2009). Interface screening and imprint in poly(vinylidene fluoride/ trifluoroethylene) ferroelectric field effect transistors. Journal of Applied Physics, 105(5). https://doi.org/10.1063/1.3088887
MLA:
Koval, Yury, et al. "Interface screening and imprint in poly(vinylidene fluoride/ trifluoroethylene) ferroelectric field effect transistors." Journal of Applied Physics 105.5 (2009).
BibTeX: Download