Gleim T, Weinhardt L, Schmidt T, Fink R, Heske C, Umbach E, Hansen L, Landwehr G, Waag A, Fleszar A, Richter B, Ammon C, Probst M, Steinrück HP (2003)
Publication Type: Journal article, Original article
Publication year: 2003
Original Authors: Gleim Th., Weinhardt L., Schmidt Th., Fink R., Heske C., Umbach E., Hansen L., Landwehr G., Waag A., Fleszar A., Richter B., Ammon Ch., Probst M., Steinrück H.-P.
Publisher: American Physical Society
Book Volume: 67
Pages Range: 2053151-2053156
Article Number: 205315
Journal Issue: 20
DOI: 10.1103/PhysRevB.67.205315
We have investigated the influence of As substrate passivation on the electronic level alignment of the heterovalent BeTe/Si(111) interface. Employing photoelectron spectroscopy, we have performed k-resolved measurements at selected excitation energies in the uv range to maximize the contribution from the F point for a correct determination of the valence band maximum. These results are compared with k-integrated data using a density-of-states function from density functional theory. For BeTe(100) and BeTe(111), we find a negligible influence of surface orientation on the position of the valence band maximum. The As passivation increases the valence band offset by 0.24 eV (±0.13 eV) compared to BeTe on an unpassivated Si substrate, thus leading to a significantly increased step in the valence band (0.37±0.13 eV). The results are discussed with respect to the barriers for electron and hole injection in heterostructures and with respect to the interface structure.
APA:
Gleim, T., Weinhardt, L., Schmidt, T., Fink, R., Heske, C., Umbach, E.,... Steinrück, H.-P. (2003). Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces. Physical Review B, 67(20), 2053151-2053156. https://doi.org/10.1103/PhysRevB.67.205315
MLA:
Gleim, Thomas, et al. "Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces." Physical Review B 67.20 (2003): 2053151-2053156.
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