Ammon C, Held G, Pantförder J, Steinrück HP (2001)
Publication Type: Journal article
Publication year: 2001
Original Authors: Ammon Ch., Held G., Pantförder J., Steinrück H.-P.
Publisher: Elsevier
Pages Range: 886-890
DOI: 10.1016/S0039-6028(00)01083-9
The growth and the electronic structure of thin Zn layers on Cu(111) in the coverage range 0 ≤ Θ ≤ 60 ML was studied by temperature-programmed desorption (TPD) of Zn and CO and angle resolved UV-photoelectron spectroscopy (ARUPS). CO titration experiments indicate two-dimensional growth for small amounts of Zn (up to 1 ML) after annealing to 400 K. Upon further annealing, the first Zn layer desorbs over a relatively wide temperature range between 500 and 640 K. For sub-monolayers of Zn an irreversible phase transition is found around 475 K which causes drastic changes in the shape of the CO-TPD spectra from these surfaces. The ARUPS data show a small but clear dispersion of the Zn 3d states for Zn layers above 0.5 ML. The transition at 475 K causes a narrowing of the Zn 3d bandwidth leaving the average binding energy unchanged. This indicates a larger separation of the Zn atoms in this surface arrangement which can be explained by a substitutional adsorption of Zn atoms. © 2001 Elsevier Science B.V. All rights reserved.
APA:
Ammon, C., Held, G., Pantförder, J., & Steinrück, H.-P. (2001). Growth and electronic properties of thin Zn layers on Cu(1 1 1). Surface Science, 886-890. https://doi.org/10.1016/S0039-6028(00)01083-9
MLA:
Ammon, Christian, et al. "Growth and electronic properties of thin Zn layers on Cu(1 1 1)." Surface Science (2001): 886-890.
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