Adams J, Fecher FW, Hoga F, Vetter A, Buerhop C, Brabec C (2014)
Publication Language: English
Publication Status: Published
Publication Type: Conference contribution, Conference Contribution
Publication year: 2014
Publisher: SPIE
Book Volume: 9177
Article Number: 917703
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
ISBN: 9781628412048
DOI: 10.1117/12.2061724
CIGS thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. These occur due to the film's sensitivity to inhomogeneities during the manufacturing process and decreasing the electrical power output from a cell or module. In this study, we present infrared (IR) imaging and contactless loss analyses of defects contained in commercially manufactured thin film solar modules. We investigated different relations between the emitted IR-signal (using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (Voc) as well as the maximum power point (Pmpp). A simulation study, using the 2D finite element method (FEM), provides a deeper understanding as to the impact on electrical performance when defects are present on the cell or module.
APA:
Adams, J., Fecher, F.W., Hoga, F., Vetter, A., Buerhop, C., & Brabec, C. (2014). IR-imaging and non-destructive loss analysis on thin film solar modules and cells. In Proceedings of SPIE - The International Society for Optical Engineering. San Diego, US: SPIE.
MLA:
Adams, Jens, et al. "IR-imaging and non-destructive loss analysis on thin film solar modules and cells." Proceedings of the Thin Films for Solar and Energy Technology VI, San Diego SPIE, 2014.
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