Fast In-Situ Diode Detector Characterization for Six-Port Interferometer Receivers

Barbon F, Lindner S, Mann S, Linz S, Weigel R, Kölpin A (2014)

Publication Type: Conference contribution

Publication year: 2014

Publisher: IEEE

Pages Range: 13-15

Event location: New Port Beach, CA US

DOI: 10.1109/WiSNet.2014.6825501

Abstract

Six-Port receivers require a precise power measurement of all their four output channels. However, due to temperature drift, fabrication and component tolerances the detectors' performance may have some degradation, which limits the measurement accuracy. Thus, an in-situ detector characterization is necessary. In this paper, a fast and simple solution for estimating the diode detectors' characteristics is presented, which is ideal for Six-Port diode power detectors. This method is fast and can be easily implemented on a microcontroller.

Authors with CRIS profile

Francesco Barbon Lehrstuhl für Technische Elektronik Stefan Lindner Lehrstuhl für Technische Elektronik Sebastian Mann Lehrstuhl für Technische Elektronik Sarah Linz Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Alexander Kölpin Lehrstuhl für Technische Elektronik

How to cite

APA:

Barbon, F., Lindner, S., Mann, S., Linz, S., Weigel, R., & Kölpin, A. (2014). Fast In-Situ Diode Detector Characterization for Six-Port Interferometer Receivers. In Proceedings of the Topical Conference on Wireless Sensors and Sensor Networks (WiSNet) (pp. 13-15). New Port Beach, CA, US: IEEE.

MLA:

Barbon, Francesco, et al. "Fast In-Situ Diode Detector Characterization for Six-Port Interferometer Receivers." Proceedings of the Topical Conference on Wireless Sensors and Sensor Networks (WiSNet), New Port Beach, CA IEEE, 2014. 13-15.

BibTeX: Download