Matt GJ, Fromherz T, Bednorz M, Zamiri S, Goncalves G, Lungenschmied C, Meissner D, Sitter H, Sariciftci NS, Brabec C, Bauer G (2010)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2010
Book Volume: 22
Pages Range: 647-650
Journal Issue: 5
A novel light-sensing scheme based on a silicon/fullerene-derivative heterojunction allows optoelectronic detection in the near- to mid-infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near- to mid-IR, presumably caused by an interfacial absorption mechanism. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
APA:
Matt, G.J., Fromherz, T., Bednorz, M., Zamiri, S., Goncalves, G., Lungenschmied, C.,... Bauer, G. (2010). Fullerene sensitized silicon for near- to mid-infrared light detection. Advanced Materials, 22(5), 647-650. https://doi.org/10.1002/adma.200901383
MLA:
Matt, Gebhard J., et al. "Fullerene sensitized silicon for near- to mid-infrared light detection." Advanced Materials 22.5 (2010): 647-650.
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