Lämmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D (2013)
Publication Type: Journal article
Publication year: 2013
Publisher: IEEE
Book Volume: 61
Pages Range: 2195-2204
Journal Issue: 5
DOI: 10.1109/TMTT.2013.2253792
APA:
Lämmle, B., Schmalz, K., Scheytt, C., Weigel, R., & Kissinger, D. (2013). A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology. IEEE Transactions on Microwave Theory and Techniques, 61(5), 2195-2204. https://doi.org/10.1109/TMTT.2013.2253792
MLA:
Lämmle, Benjamin, et al. "A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology." IEEE Transactions on Microwave Theory and Techniques 61.5 (2013): 2195-2204.
BibTeX: Download