A Low Power SiGe HBT LNA For UWB Applications

Hamouda M, Fischer G, Weigel R, Ußmüller T (2012)

Publication Type: Conference contribution

Publication year: 2012

Conference Proceedings Title: German Microwave Conference

Event location: Ilmenau, Germany

Abstract

A low noise amplifier (LNA) is implemented in this work for ultra wide band (UWB) localization and sensing systems within a wide frequency range starting from 400MHz and up to 10GHz. The topology used is a resistive shunt feedback and a peaking inductance in series with the output transistor to achieve the desired bandwidth and have better noise performance. The LNA is fabricated in low cost 0.25μm 92GHz fmax SiGe-HBT BiCMOS process technology. The area of the manufactured chip is 0.73mm2. The achieved gain is 12dB with a NF less than 3.7dB over the entire frequency range while the consumed power is only 14.5mW.

Authors with CRIS profile

Mohammed Hamouda Lehrstuhl für Technische Elektronik Georg Fischer Professur für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik Thomas Ußmüller Lehrstuhl für Technische Elektronik

How to cite

APA:

Hamouda, M., Fischer, G., Weigel, R., & Ußmüller, T. (2012). A Low Power SiGe HBT LNA For UWB Applications. In German Microwave Conference. Ilmenau, Germany.

MLA:

Hamouda, Mohammed, et al. "A Low Power SiGe HBT LNA For UWB Applications." Proceedings of the German Microwave Conference, Ilmenau, Germany 2012.

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