High Frequency Characterization of Thin-Film Redistribution Layers for Embedded Wafer Level BGA
Wojnowski M, Engl M, Brunnbauer M, Pressel K, Sommer G, Weigel R (2007)
Publication Type: Conference contribution
Publication year: 2007
Publisher: IEEE
Pages Range: 308-314
Conference Proceedings Title: 9th Electronics Packaging Technology Conference
Event location: Singapore, SG
DOI: 10.1109/EPTC.2007.4469826
Abstract
We present high frequency characterization of thin-film redistribution layers for an embedded wafer level BGA package technology. This technology is based on a "molded reconfigured wafer" concept where the chip area is not the limitation for external contacts. The flexible thin-film redistribution layers in the fan-out area enable the realization of high-density, low-loss transmission lines with precisely controlled characteristic impedance. Due to low-loss dielectrics and thick copper metallization, we can realize high-Q passives. We show measurement results of coplanar transmission lines with insertion loss 0.2 dB/mm at 60 GHz. We present measurement results of high-Q inductors with inductance values ranging from 2.8 nH to 30 nH and a quality factor of up to 39. The results demonstrate an outstanding potential of the embedded wafer level BGA concept for high frequency SiP applications.
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Germany (DE)How to cite
APA:
Wojnowski, M., Engl, M., Brunnbauer, M., Pressel, K., Sommer, G., & Weigel, R. (2007). High Frequency Characterization of Thin-Film Redistribution Layers for Embedded Wafer Level BGA. In 9th Electronics Packaging Technology Conference (pp. 308-314). Singapore, SG: IEEE.
MLA:
Wojnowski, Maciej, et al. "High Frequency Characterization of Thin-Film Redistribution Layers for Embedded Wafer Level BGA." Proceedings of the 9th Electronics Packaging Technology Conference, Singapore, SG IEEE, 2007. 308-314.
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