Kitlinski K, Donig G, Kapfelsperger B, Weigel R (2004)
Publication Type: Conference contribution
Publication year: 2004
Book Volume: 1
Pages Range: 363-366
Conference Proceedings Title: 15th International Conference on Microwaves, Radar and Wireless Communications (MIKON), 2004
Event location: Warsaw, PL
DOI: 10.1109/MIKON.2004.1356946
A monolithic radiofrequency power amplifier for WCDMA handheld applications has been fabricated in a 0.35 μm, 40 GHz fT, volume production Si-Ge bipolar technology. The process technology features a doped ground connection for on-chip devices to improve the overall performance. At 3.3 V supply voltage saturated output power of 29 dBm with a PAE of 50 \% has been achieved; simultaneously P-1dB is 28 dBm at 1.95 GHz and the small signal gain is 32 dB.
APA:
Kitlinski, K., Donig, G., Kapfelsperger, B., & Weigel, R. (2004). Si-Ge Power Amplifier for WCDMA Handheld Applications. In 15th International Conference on Microwaves, Radar and Wireless Communications (MIKON), 2004 (pp. 363-366). Warsaw, PL.
MLA:
Kitlinski, Krzysztof, et al. "Si-Ge Power Amplifier for WCDMA Handheld Applications." Proceedings of the 15th International Conference on Microwaves, Radar and Wireless Communications (MIKON), 2004, Warsaw, PL 2004. 363-366.
BibTeX: Download