Jäger H, Grebennikov A, Heany E, Weigel R (2002)
Publication Type: Conference contribution
Publication year: 2002
Publisher: IEEE
Pages Range: 1035-1038
Conference Proceedings Title: IEEE International Mircowave Symposium Digest
Event location: Seattle, WA , USA
ISBN: 978-0-7803-7239-9
DOI: 10.1109/MWSYM.2002.1011812
In this paper, an approach to high efficiency power amplifier performance over a wide frequency range is discussed. Results for practical implementation of a multiband and multi-mode handset power amplifier are shown. Measurements demonstrate feasibility of the concept for WCDMA, DCS1800 and PCS1900 high-efficient operation. A PAE of better than 38\% at 27 dBm output power and an ACLR of -37 dBc in WCDMA operation, as well as greater than 50\% PAE at 30 dBm output power in the DCS1800 and PCS1900 band are documented
APA:
Jäger, H., Grebennikov, A., Heany, E., & Weigel, R. (2002). Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications. In IEEE International Mircowave Symposium Digest (pp. 1035-1038). Seattle, WA , USA: IEEE.
MLA:
Jäger, Herbert, et al. "Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications." Proceedings of the IEEE International Mircowave Symposium Digest, Seattle, WA , USA IEEE, 2002. 1035-1038.
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