Analysis of the interaction of surface acoustic waves with charge carriers in layered structures
Weigel R, Roesler U, Meier H, Russer P (1994)
Publication Type: Conference contribution
Publication year: 1994
Publisher: IEEE
Book Volume: 1
Pages Range: 337-340
Conference Proceedings Title: IEEE Ultrasonics Symposium
ISBN: 978-0-7803-2012-3
Abstract
We have computed the propagation behavior of surface acoustic waves (SAW's) under a non-piezoelectric, conducting layer on a semi-infinite piezoelectric substrate. Due to the finite conductivity of the film which is deposited on the substrate surface the interaction of the SAW with the charge carriers in this layer involves changes in both attenuation and dispersion. In our analysis, mass loading and stress loading are taken exactly into account. We also include the space charge density distribution in the film by using and comparing four different space charge models. As an example, we present the phase velocity and the attenuation coefficient of the fundamental SAW mode propagating on a 128rotYX LiNbO3 substrate coated with a thin layer of amorphous silicon (a:Si) as a function of the silicon conductivity and the film thickness. It is found that an appropriately dimensioned semiconducting film may be used as an efficient absorbing material in SAW devices for consumer and commercial applications
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APA:
Weigel, R., Roesler, U., Meier, H., & Russer, P. (1994). Analysis of the interaction of surface acoustic waves with charge carriers in layered structures. In IEEE Ultrasonics Symposium (pp. 337-340). IEEE.
MLA:
Weigel, Robert, et al. "Analysis of the interaction of surface acoustic waves with charge carriers in layered structures." Proceedings of the IEEE Ultrasonics Symposium IEEE, 1994. 337-340.
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