Nugraha MI, Matsui H, Bisri SZ, Sytnyk M, Heiß W, Loi MA, Takeya J, Heiß W (2016)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Publisher: American Institute of Physics Inc.
Book Volume: 4
Article Number: 116105
Journal Issue: 11
DOI: 10.1063/1.4966208
We study the effect of self-assembled monolayer (SAM) treatment of the SiO dielectric on the electrical characteristics of PbS transistors. Using SAMs, we observe threshold voltage shifts in the electron transport, allowing us to tune the electrical properties of the devices depending on the SAM molecule used. Moreover, the use of a specific SAM improves the charge carrier mobility in the devices by a factor of three, which is attributed to the reduced interface traps due to passivated silanol on the SiO surface. These reduced traps confirm that the voltage shifts are not caused by the trap states induced by the SAMs.
APA:
Nugraha, M.I., Matsui, H., Bisri, S.Z., Sytnyk, M., Heiß, W., Loi, M.A.,... Heiß, W. (2016). Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles. APL Materials, 4(11). https://doi.org/10.1063/1.4966208
MLA:
Nugraha, Mohamad I., et al. "Tunable doping in PbS nanocrystal field-effect transistors using surface molecular dipoles." APL Materials 4.11 (2016).
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