Jank MPM, Lemberger M, Bauer A, Frey L, Ryssel H (2001)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2001
Publisher: Elsevier Ltd
Book Volume: 41
Pages Range: 987-990
Journal Issue: 7
DOI: 10.1016/S0026-2714(01)00053-1
The effect of through the gate implantation (TGI) on MOS devices with oxide thicknesses of 3.3, 4.0, and 20 nm is studied, utilizing constant voltage stress tests and a substrate hot electron (SHE) injection technique. For 3.3 and 4.0 nm thick oxides, a dependence of time to breakdown on TGI dose is detected which, for 3.3 nm samples, diminishes with increasing test voltage. SHE injection measurements show a TGI induced increase in intrinsic electron trap density and also an increase in trap generation rate during sample stressing. A change of electron trap generation dynamics seems to be the main cause for oxide weakening due to TGI.
APA:
Jank, M.P.M., Lemberger, M., Bauer, A., Frey, L., & Ryssel, H. (2001). Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectronics Reliability, 41(7), 987-990. https://doi.org/10.1016/S0026-2714(01)00053-1
MLA:
Jank, Michael P. M., et al. "Electrical reliability aspects of through the gate implanted MOS structures with thin oxides." Microelectronics Reliability 41.7 (2001): 987-990.
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