Fahlbusch L, Schöler M, Mattle P, Schnitzer S, Khodamoradi H, Iwamoto N, Svensson BG, Wellmann P (2016)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Publisher: Trans Tech Publications Ltd
City/Town: Switzerland
Book Volume: 858
Pages Range: 33-36
Conference Proceedings Title: Materials Science Forum (858)
Event location: Giardini Naxos
ISBN: 9783035710427
DOI: 10.4028/www.scientific.net/MSF.858.33
We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C melt at growth temperatures of 2300 °C. For this procedure we present a detailed description of the growth process and discuss the influence of different growth parameters on the surface morphology and growth rate. So far, we managed to grow SiC layers with a thickness up to 300 μm. The characterization of the crystal morphology was carried out using SEM images and the metal concentration was estimated using SIMS.
APA:
Fahlbusch, L., Schöler, M., Mattle, P., Schnitzer, S., Khodamoradi, H., Iwamoto, N.,... Wellmann, P. (2016). High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C. Materials Science Forum, 858, 33-36. https://doi.org/10.4028/www.scientific.net/MSF.858.33
MLA:
Fahlbusch, Lars, et al. "High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C." Materials Science Forum 858 (2016): 33-36.
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