Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher T, Jank MPM, Ryssel H, Frey L, Engl R, Walter A, Sezi R, Dehm C (2008)
Publication Status: Published
Publication Type: Journal article
Publication year: 2008
Journal
Publisher: ELECTROCHEMICAL SOC INC
Book Volume: 155
Pages Range: H693-H697
Journal Issue: 9
DOI: 10.1149/1.2957907
Abstract
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from liquid phase is investigated and a model for film growth is derived. Then, a deposition technique for charge-transfer complexes, namely selective organic vapor-phase deposition, is introduced which excels in selectivity and homogeneity. In particular, silicon dioxide layers exposed to the precursor molecules during processing remain completely uncovered, whereas copper pads in contact holes are rapidly filled with the desired layer of the charge-transfer complex. Then, both deposition methods are compared regarding reproducibility, selectivity, homogeneity, and the ability to selectively grow thin films in small structures with diameters below 200 nm. Finally, electrical switching properties are investigated and the switching mechanism for the present charge-transfer complex is discussed. (C) 2008 The Electrochemical Society.
Authors with CRIS profile
Tobias Erlbacher
Lehrstuhl für Elektronische Bauelemente
Heiner Ryssel
Technische Fakultät
Lothar Frey
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Qimonda AG
Germany (DE)
Infineon Technologies AG
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Germany (DE)
Infineon Technologies AG
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
How to cite
APA:
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A.,... Dehm, C. (2008). Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition. Journal of The Electrochemical Society, 155(9), H693-H697. https://doi.org/10.1149/1.2957907
MLA:
Erlbacher, Tobias, et al. "Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition." Journal of The Electrochemical Society 155.9 (2008): H693-H697.
BibTeX: Download