Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

Mueller J, Boescke TS, Braeuhaus D, Schroeder U, Boettger U, Sundqvist J, Kuecher P, Mikolajick T, Frey L (2011)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2011

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 99

Article Number: 112901

Journal Issue: 11

DOI: 10.1063/1.3636417

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

NaMLab gGmbH DE Germany (DE) Fraunhofer-Institut für Photonische Mikrosysteme (IPMS) / Fraunhofer Institute for Photonic Microsystems DE Germany (DE) Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen DE Germany (DE)

How to cite

APA:

Mueller, J., Boescke, T.S., Braeuhaus, D., Schroeder, U., Boettger, U., Sundqvist, J.,... Frey, L. (2011). Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications. Applied Physics Letters, 99(11). https://doi.org/10.1063/1.3636417

MLA:

Mueller, J., et al. "Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications." Applied Physics Letters 99.11 (2011).

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