Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2

Mueller J, Boescke TS, Schroeder U, Hoffmann R, Mikolajick T, Frey L (2012)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2012

Journal

IEEE Electron Device Letters Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 33

Pages Range: 185-187

Article Number: 6123190

Journal Issue: 2

DOI: 10.1109/LED.2011.2177435

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Qimonda AG DE Germany (DE) Technische Universität Dresden DE Germany (DE) Fraunhofer-Institut für Photonische Mikrosysteme (IPMS) / Fraunhofer Institute for Photonic Microsystems DE Germany (DE)

How to cite

APA:

Mueller, J., Boescke, T.S., Schroeder, U., Hoffmann, R., Mikolajick, T., & Frey, L. (2012). Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2. IEEE Electron Device Letters, 33(2), 185-187. https://doi.org/10.1109/LED.2011.2177435

MLA:

Mueller, Johannes, et al. "Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2." IEEE Electron Device Letters 33.2 (2012): 185-187.

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