Hauck M, Weiße J, Lehmeyer J, Pobegen G, Weber HB, Krieger M (2016)
Publication Language: English
Publication Type: Book chapter / Article in edited volumes
Publication year: 2016
Edited Volumes: Materials Science Forum
DOI: 10.4028/www.scientific.net/MSF.897.111
APA:
Hauck, M., Weiße, J., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2016). Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy. In Materials Science Forum..
MLA:
Hauck, Martin, et al. "Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy." Materials Science Forum. 2016.
BibTeX: Download