Weingärtner R, Bickermann M, Herro ZG, Künecke U, Sakwe A, Wellmann P, Winnacker A (2003)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2003
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 433-436
Pages Range: 333-336
Conference Proceedings Title: Materials Science Forum (Volumes 433-436)
DOI: 10.4028/www.scientific.net/MSF.433-436.333
We present an optical method for the determination of the charge carrier concentration as well as the compensation level based on absorption measurements at room temperature in n-type 6H-SiC. Below band-gap absorption bands (BBGA) are best fitted by a Fano like shape. Calibration plots are provided for evaluation of the charge carrier concentration from the peak area of the BBGA. The compensation level is derived from the comparison of the peak area of the BBGA and the absolute peak value.
APA:
Weingärtner, R., Bickermann, M., Herro, Z.G., Künecke, U., Sakwe, A., Wellmann, P., & Winnacker, A. (2003). Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 333-336. https://doi.org/10.4028/www.scientific.net/MSF.433-436.333
MLA:
Weingärtner, Roland, et al. "Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC." Materials Science Forum 433-436 (2003): 333-336.
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