Lautner J, Piepenbreier B (2015)
Publication Type: Conference contribution
Publication year: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Edited Volumes: PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
Pages Range: xy
Conference Proceedings Title: Proceedings of PCIM Europe 2015
Event location: Nuremberg, Germany
ISBN: 978-3-8007-3924-0
APA:
Lautner, J., & Piepenbreier, B. (2015). Comparing Switching Performance of Gallium Nitride HEMT and Silicon Power MOSFET. In Proceedings of PCIM Europe 2015 (pp. xy). Nuremberg, Germany: Institute of Electrical and Electronics Engineers Inc..
MLA:
Lautner, Jennifer, and Bernhard Piepenbreier. "Comparing Switching Performance of Gallium Nitride HEMT and Silicon Power MOSFET." Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany Institute of Electrical and Electronics Engineers Inc., 2015. xy.
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