Endruschat A, Heckel T, Gerstner H, Joffe C, Eckardt B, März M (2017)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2017
Event location: Albuquerque, NM
DOI: 10.1109/WiPDA.2017.8170529
This paper presents a procedure to acquire precise measurement data of the output characteristics with a custom-made setup. In comparison to datasheets and common curve tracer measurements, the measurement range is extended and the accuracy improved. After deriving the theoretical minimal switching energy for semiconductor switches in a half-bridge configuration, possible operating points of the latest semiconductors are calculated with the measurement data. Based on these calculations, a comparison of different technologies and materials is made regarding their potential in currently available switches.
APA:
Endruschat, A., Heckel, T., Gerstner, H., Joffe, C., Eckardt, B., & März, M. (2017). Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices. In Proceedings of the 2017 IEEE WiPDA. Albuquerque, NM, US.
MLA:
Endruschat, Achim, et al. "Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices." Proceedings of the 2017 IEEE WiPDA, Albuquerque, NM 2017.
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