Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Absorption coefficients of GeSn extracted from PIN photodetector response (2015) Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, et al. Journal article Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design (2015) Zhang W, Oehme M, Kostecki K, Matthies K, Stefani V, Kasper E, Schulze J Conference contribution Tuning the Ge(Sn) tunneling FET: Influence of drain doping, short channel, and Sn content (2015) Haehnel D, Fischer IA, Hornung A, Koellner AC, Schulze J Journal article Plasmonics-integrated Ge PIN-photodetectors: Efficiency enhancement by Al nanoantennas and plasmon detection (2015) Fischer IA, Augel L, Jitpakdeebodin S, Franz N, Fleischer S, Schulze J Conference contribution Electrically pumped lasing from Ge Fabry-Perot resonators on Si (2015) Koerner R, Oehme M, Gollhofer M, Schmid M, Kostecki K, Bechler S, Widmann D, et al. Journal article Electroluminescence of GeSn/Ge MQW LEDs on Si substrate (2015) Schwartz B, Oehme M, Kostecki K, Widmann D, Gollhofer M, Koerner R, Bechler S, et al. Journal article Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si (2014) Fischer IA, Chang LT, Suergers C, Rolseth E, Reiter S, Stefanov S, Chiussi S, et al. Journal article High speed vertical GeSn photodiodes on Si (2014) Gollhofer M, Oehme M, Kostecki K, Ye K, Bechler S, Ulbricht K, Schmid M, et al. Conference contribution Electroluminescence of germanium LEDs on silicon: Influence of antimony doping (2014) Schwartz B, Klossek A, Kittler M, Oehme M, Kasper E, Schulze J Journal article A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage (2014) Zhang W, Kasper E, Oehme M, Kaschel M, Stefani V, Schulze J Conference contribution