Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications (2016) Zhang W, Oehme M, Kostecki K, Matthies K, Stefani V, Raju AI, Noll D, et al. Conference contribution Electrical detection of spin transport in Si two-dimensional electron gas systems (2016) Chang LT, Fischer IA, Tang J, Wang CY, Yu G, Fan Y, Murata K, et al. Journal article Contact resistivities of antimony-doped n-type Ge1-xSn x (2016) Srinivasan VSS, Fischer IA, Augel L, Hornung A, Koerner R, Kostecki K, Oehme M, et al. Journal article Compositional dependence of the band-gap of Ge1-x-YSixSny alloys (2016) Wendav T, Fischer IA, Montanari M, Zoellner MH, Klesse W, Capellini G, Von Den Driesch N, et al. Journal article S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode (2016) Zhang W, Yamamoto Y, Oehme M, Matthies K, Raju AI, Srinivasan VSS, Koerner R, et al. Journal article Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes (2016) Fischer IA, Augel L, Kropp T, Jitpakdeebodin S, Franz N, Oliveira F, Rolseth E, et al. Journal article Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers (2016) Schwartz B, Saring P, Arguirov T, Oehme M, Kostecki K, Kasper E, Schulze J, Kittler M Conference contribution Ge and GeSn light emitters on Si (2016) Oehme M, Gollhofer M, Kostecki K, Koerner R, Bechler S, Widmann D, Arguirov T, et al. Conference contribution Growth and characterization of SiGeSn quantum well photodiodes (2015) Fischer IA, Wendav T, Augel L, Jitpakdeebodin S, Oliveira F, Benedetti A, Stefanov S, et al. Journal article Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors (2015) Schulze J, Blech A, Datta A, Fischer IA, Haehnel D, Naasz S, Rolseth E, Tropper EM Journal article