Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Optical critical points of Si x Ge1-x-ySn y alloys with high Si content (2017) Fischer IA, Berrier A, Hornung F, Oehme M, Zaumseil P, Capellini G, Den Driesch NV, et al. Journal article (Si)GeSn plasmonics (2017) Fischer IA, Augel L, Berrier A, Oehme M, Schulze J Conference contribution Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD (2017) Weisshaupt D, Jahandar P, Colston G, Allred P, Schulze J, Myronov M Conference contribution Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges (2017) Rolseth EG, Blech A, Fischer IA, Hashad Y, Koerner R, Kostecki K, Kruglov A, et al. Conference contribution Fabrication and simulation of vertical Ge-based P-channel planar-doped barrier FETs with 40 nm channel length (2017) Elogail Y, Elkhouly K, Fischer I, Kostecki K, Schulze J Conference contribution Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories (2017) Khosla R, Rolseth EG, Kumar P, Vadakupudhupalayam SS, Sharma SK, Schulze J Journal article Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) (2017) Schwartz B, Oehme M, Koerner R, Bechler S, Schulze J, Kittler M Conference contribution Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling (2016) Wendav T, Fischer IA, Virgilio M, Capellini G, Oliveira F, Cerqueira MF, Benedetti A, et al. Journal article Sub-0.2 V impact ionization in Si n-i-p-i-n diode (2016) Das B, Sushama S, Schulze J, Ganguly U Journal article Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios (2016) Zhang W, Oehme M, Matthies K, Stefani V, Raju AI, Kasper E, Schulze J Conference contribution