Prof. Dr.-Ing. Jörg Schulze

Lehrstuhl für Elektronische Bauelemente

Improvement of Thermal Endurance for Integrated Millimeter-Wave Silicon IMPATT Device in μm2-Scale (2020) Zhang W, Yu J, Schulze J, Kasper E Conference contribution Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells (2020) Fischer IA, Clausen CJ, Schwarz D, Zaumseil P, Capellini G, Virgilio M, Figueira MCDS, et al. Journal article Weak localization and weak antilocalization in doped Ge1-y Sny layers with up to 8% Sn (2020) Weisshaupt D, Funk HS, Kern M, Dettling MM, Schwarz D, Oehme M, Suergers C, et al. Journal article Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy (2019) Schlipf J, Martin E, Stchakovsky M, Benedetti A, Fischer IA, Schulze J, Chiussi S Journal article A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector (2019) Kollner AC, Yu Z, Oehme M, Anders J, Kaschel M, Schulze J, Burghartz JN Conference contribution Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C (2019) Knežević T, Suligoj T, Liu X, Nanver LK, Elsayed A, Dick JF, Schulze J Conference contribution PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse (2019) Das B, Lele A, Kumbhare P, Schulze J, Ganguly U Journal article A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation (2019) Zhang W, Kasper E, Schulze J Conference contribution Insulated Gate Bipolar Transistors based on Pure Boron Collectors (2019) Elsayed A, Dick JF, Schulze J Conference contribution An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter with Monolithically Integrated Coplanar Waveguide Patch Antenna (2019) Zhang W, Kasper E, Schulze J Journal article