Prof. Dr. Bernd Witzigmann

Lehrstuhl für Optoelektronik

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors (2017) Yu F, Yao S, Roemer F, Witzigmann B, Schimpke T, Strassburg M, Bakin A, et al. Journal article Luminescence distribution in the multi-quantum well region of III-nitride light emitting diodes (2017) Römer F, Witzigmann B Conference contribution, Conference Contribution Effect of oxygen impurities in semipolar III-nitride light emitting diodes (2017) Roemer F, Witzigmann B Journal article Nanowire solar cells: Electro-optical performance (2017) Witzigmann B Book chapter / Article in edited volumes Vertical architecture for enhancement mode power transistors based on GaN nanowires (2016) Yu F, Ruemmler D, Hartmann J, Caccamo L, Schimpke T, Strassburg M, Gad AE, et al. Journal article Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements (2016) Rychetsky M, Koslow I, Avinc B, Rass J, Wernicke T, Bellmann K, Sulmoni L, et al. Journal article Optimization of 1.55 µm quantum dot edge-emitting lasers for narrow spectral linewidth (2016) Bjelica M, Witzigmann B Journal article Narrow-linewidth 1.5 μm quantum dot distributed feedback lasers (2016) Becker A, Sichkovskyi V, Bjelica M, Eyal O, Baum P, Rippien A, Schnabel F, et al. Conference contribution Integration of wet-etched GaN nanowires for vertical power transistors (2016) Yu F, Yao S, Römer F, Witzigmann B, Wasisto HS, Waag A Conference contribution Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method (2016) Shedbalkar A, Andreev Z, Witzigmann B Journal article