Dr. Elke Meißner



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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

Inspection of Bulk Crystals for Quality Control in Crystal Growth: Assessment of High-Energy X-Ray Transmission Topography and Back-Reflection Topography Pinpointed for Physical Vapor Transport-Grown Aluminum Nitride (2025) Weingärtner R, Epelbaum B, Lesnik A, Lukin G, Müller S, Schiller L, Meissner E, et al. Journal article Self-organised ordering of scandium into basal monolayers of aluminium nitride and its implication for the growth of well-crystallized (Al,Sc)N materials for electronic devices (2025) Bläß U, Wu M, Epelbaum B, Meißner E Journal article Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers (2025) Faraji S, Meißner E, Besendörfer S, Miersch C, Weingärtner R, Beyer FC, Friedrich J Journal article Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN-on-Si(111) PIN-Structures for Power Electronics (2024) Michler S, Thapa S, Besendörfer S, Albrecht M, Weingärtner R, Meissner E Journal article Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage (2024) Michler S, Hamdaoui Y, Thapa S, Schwalb G, Besendörfer S, Ziouche K, Albrecht M, et al. Journal article Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs (2023) Garbe V, Seidel S, Schmid A, Bläß U, Meissner E, Heitmann J Journal article Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions (2022) Besendoerfer S, Meissner E, Friedrich J Journal article X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks (2021) Rafaja D, Fischer P, Barchuk M, Motylenko M, Roeder C, Besendoerfer S, Meißner E Journal article The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors (2021) Meißner E, Besendörfer S, Faraji S, Bahat-Treidel E, Würfl J Conference contribution Ammonothermal Materials (2021) Schnick W, Cordes N, Mallmann M, Niewa R, Meißner E Book chapter / Article in edited volumes