Prof. Dr. Heiko Weber

Chair of Applied Physics (LAP)

An efficient Terahertz rectifier on the graphene/SiC materials platform (2019) Schlecht MT, Malzer S, Preu S, Weber HB Journal article, Original article Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect (2019) Kißlinger F, Rienmüller D, Ott C, Kampert E, Weber HB Journal article, Letter An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution Lightwave-controlled electron dynamics in graphene (2019) Heide C, Higuchi T, Ullmann K, Weber HB, Hommelhoff P Conference contribution Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime (2019) Heide C, Boolakee T, Higuchi T, Weber HB, Hommelhoff P Journal article Coherent Electron Trajectory Control in Graphene (2018) Heide C, Higuchi T, Weber HB, Hommelhoff P Journal article, Letter Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter Structural fluctuations cause spin-split states in tetragonal (CH₃NH₃)PbI₃ as evidenced by the circular photogalvanic effect (2018) Niesner D, Hauck M, Shrestha S, Levchuk I, Matt G, Osvet A, Batentschuk M, et al. Journal article, Original article Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Journal article, Letter