Dr.-Ing. Johannes Steiner

Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution On the importance of dislocation flow in continuum plasticity models for semiconductor materials (2020) Nguyen BD, Rausch A, Steiner J, Wellmann P, Sandfeld S Journal article Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results (2020) Steiner J, Arzig M, Denisov A, Wellmann P Journal article, Original article Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules (2019) Ellefsen OM, Arzig M, Steiner J, Wellmann P, Runde P Journal article Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals (2019) Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann P Journal article Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks (2019) Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article, Original article Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019) Schöler M, Schuh P, Steiner J, Wellmann P Journal article, Original article Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC (2019) Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann P Journal article