Dr. Svetlana Beljakowa

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Chair of Applied Physics (LAP)
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition (2016) Sledziewski T, Vivona M, Alassaad K, Kwasnicki P, Arvinte R, Beljakowa S, Weber HB, et al. Journal article, Letter Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition (2014) Sledziewski T, Beljakowa S, Alassaad K, Kwasnicki P, Arvinte R, Juillaguet S, Zielinski M, et al. Journal article, Original article Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures (2014) Beljakowa S, Hauck M, Bockstedte MG, Fromm F, Hundhausen M, Nagasawa H, Weber HB, et al. Journal article Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors (2008) Krieger M, Beljakowa S, Trapaidze L, Frank T, Weber HB, Pensl G, Hatta N, et al. Journal article