Prof. Dr. Albrecht Winnacker

Technische Fakultät

Investigation of a PVT SiC-growth set-up modified by an additional gas flow (2001) Straubinger T, Wellmann P, Winnacker A Journal article, Original article In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging (2000) Wellmann P, Bickermann M, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions (2000) Straubinger T, Bickermann M, Grau M, Hofmann HD, Kadinski L, Müller G, Selder M, et al. Journal article, Original article Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation (2000) Wellmann P, Bickermann M, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics (2000) Winnacker A, Hofmann HD, Wellmann P Conference contribution, Conference Contribution Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging (1999) Wellmann P, Bickermann M, Grau M, Hofmann HD, Straubinger T, Winnacker A Journal article, Original article Analysis on defect generation during the SiC bulk growth process (1999) Hofmann HD, Schmitt E, Bickermann M, Kölbl M, Wellmann P, Winnacker A Journal article, Original article On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP (1996) Wellmann P, Winnacker A, Pensl G Journal article, Original article Acceptor-hydrogen interaction in ternary III-V semiconductors (1995) Burchard A, Deicher M, Forkel-Wirth D, Freidinger J, Kerle T, Magerle R, Pfeiffer W, et al. Journal article, Original article Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy (1994) Waldmüller S, Lang M, Wellmann P, Winnacker A Conference contribution