Prof. Dr. Albrecht Winnacker

Technische Fakultät

Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements (2002) Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A Journal article On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Impact of source material on silicon carbide vapor transport growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article SiC crystal growth from the vapor and liquid phase (2001) Hofmann HD, Bickermann M, Ebling D, Epelbaum B, Kadinski L, Selder M, Straubinger T, et al. Journal article, Original article Study of boron incorporation during PVT growth of p-type SiC crystals (2001) Bickermann M, Hofmann HD, Rasp M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article, Original article Stability criteria for 4H-SiC bulk growth (2001) Straubinger T, Bickermann M, Hofmann HD, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article