Prof. Dr. Albrecht Winnacker

Technische Fakultät

Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution (2008) Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, et al. Journal article Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers (2007) Groß M, Winnacker A, Wellmann P Journal article SiC single crystal growth by a modified physical vapor transport technique (2005) Wellmann P, Desperrier P, Müller R, Straubinger T, Winnacker A, Baillet F, Blanquet E, et al. Journal article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals (2005) Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P Journal article, Original article In situ visualization of SiC physical vapor transport crystal growth (2005) Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, et al. Journal article On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC (2004) Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source (2004) Desperrier P, Müller R, Winnacker A, Wellmann P Journal article, Original article In-situ Er-doping of SiC bulk single crystals (2004) Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P Journal article, Original article Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC (2003) Weingärtner R, Albrecht A, Wellmann P, Winnacker A Journal article, Original article