PD Dr. Thomas Seyller

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Silicon Carbide and Related Materials 2009 - Parts 1 and 2 (2010) Bauer A, Friedrichs P, Krieger M, Pensl G, Rupp R, Seyller T Edited Volume Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties (2010) Weingart S, Bock C, Kunze U, Emtsev K, Seyller T, Ley L Journal article, Original article Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy (2010) Röhrl J, Hundhausen M, Speck F, Seyller T Journal article Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide (2010) Ristein J, Zhang W, Speck F, Ostler M, Ley L, Seyller T Journal article Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM (2010) Speck F, Ostler M, Röhrl J, Emtsev K, Hundhausen M, Ley L, Seyller T Journal article Experimental studies of the electronic structure of graphene (2009) Bostwick A, Mcchesney J, Ohta T, Rotenberg E, Seyller T, Horn K Journal article Friction and Dissipation in Epitaxial Graphene Films (2009) Filleter T, Mcchesney JL, Bostwick A, Rotenberg E, Emtsev KV, Seyller T, Horn K, Bennewitz R Journal article Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide (2009) Emtsev K, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney J, et al. Journal article Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions (2009) Weingart S, Bock C, Kunze U, Speck F, Seyller T, Ley L Journal article, Original article Local work function measurements of epitaxial graphene (2008) Filleter T, Emtsev K, Seyller T, Bennewitz R Journal article