PD Dr. Thomas Seyller

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Transport properties of high-quality epitaxial graphene on 6H-SiC(0001) (2011) Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB Journal article, Letter Bottom-gated epitaxial graphene (2011) Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB Journal article, Letter The quasi-free-standing nature of graphene on H-saturated SiC(0001) (2011) Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber HB, Seyller T Journal article, Letter Quantum oscillations and quantum Hall effect in epitaxial graphene (2010) Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB Journal article, Letter Extended van Hove Singularity and Superconducting Instability in Doped Graphene (2010) Mcchesney JL, Bostwick A, Ohta T, Seyller T, Horn K, Gonzalez J, Rotenberg E Journal article Epitaxial Graphenes on Silicon Carbide (2010) Seyller T Journal article, Review article Giant Faraday rotation in single- and multilayer graphene (2010) Crassee I, Levallois J, Walter AL, Ostler M, Bostwick A, Rotenberg E, Seyller T, et al. Journal article Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem (2010) Koch RJ, Seyller T, Schaefer JA Journal article Observation of Plasmarons in Quasi-Freestanding Doped Graphene (2010) Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R, Macdonald AH, Rotenberg E Journal article Quasi-freestanding Graphene on SiC(0001) (2010) Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, et al. Journal article