Martin Hauck

Chair of Applied Physics (LAP)

Attosecond-fast internal photoemission (2020) Heide C, Hauck M, Higuchi T, Ristein J, Ley L, Weber HB, Hommelhoff P Journal article, Letter On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs (2019) Rasinger F, Hauck M, Rescher G, Aichinger T, Weber HB, Krieger M, Pobegen G Journal article Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs (2019) Hauck M, Krieger M Journal article, other An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Structural fluctuations cause spin-split states in tetragonal (CH₃NH₃)PbI₃ as evidenced by the circular photogalvanic effect (2018) Niesner D, Hauck M, Shrestha S, Levchuk I, Matt G, Osvet A, Batentschuk M, et al. Journal article, Original article Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices (2018) Weiße J, Hauck M, Sledziewski T, Tschiesche M, Krieger M, Bauer A, Mitlehner H, et al. Journal article, Report On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs (2016) Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M Journal article, Letter