Dr. Michael Krieger

Chair of Applied Physics

On deep level transient spectroscopy of extended defects in n-type 4H-SiC (2017) Weber J, Weber HB, Krieger M Conference contribution Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition (2016) Sledziewski T, Vivona M, Alassaad K, Kwasnicki P, Arvinte R, Beljakowa S, Weber HB, et al. Journal article, Letter On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs (2016) Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M Journal article, Letter Doping of 4H-SiC with group IV elements (2016) Krieger M, Rühl M, Sledziewski T, Ellrott G, Palm T, Weber HB, Bockstedte MG Journal article, Letter Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces (2016) Sledziewski T, Weber HB, Krieger M Journal article, Letter Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy (2016) Hauck M, Weiße J, Lehmeyer J, Pobegen G, Weber HB, Krieger M Book chapter / Article in edited volumes Gateless patterning of epitaxial graphene by local intercalation (2015) Sorger C, Hertel S, Jobst J, Steiner C, Meil K, Ullmann K, Albert A, et al. Journal article Electrical properties of the hydrogen intercalated epitaxial graphene/SiC interface investigated by nanoscale current mapping (2015) Giannazzo F, Hertel S, Albert A, Fisichella G, La Magna A, Roccaforte F, Krieger M, Weber HB Journal article, Letter Graphene Ohmic Contacts to n-type Silicon Carbide (0001) (2015) Hertel S, Finkler A, Krieger M, Weber HB Journal article Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC (2015) Sledziewski T, Ellrott G, Rösch W, Weber HB, Krieger M Journal article