Dr. Michael Krieger

Chair of Applied Physics (LAP)

Stark Tuning of the Silicon Vacancy in Silicon Carbide (2020) Rühl M, Bergmann L, Krieger M, Weber HB Journal article, Letter On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs (2019) Rasinger F, Hauck M, Rescher G, Aichinger T, Weber HB, Krieger M, Pobegen G Journal article Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs (2019) Hauck M, Krieger M Journal article, other Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET (2019) Berens J, Rasinger F, Aichinger T, Heuken M, Krieger M, Pobegen G Journal article, Original article An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter