Dr. Michael Krieger

Chair of Applied Physics

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs (2019) Hauck M, Krieger M Journal article, other Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET (2019) Berens J, Rasinger F, Aichinger T, Heuken M, Krieger M, Pobegen G Journal article, Original article An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Journal article, Letter Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices (2018) Weiße J, Hauck M, Sledziewski T, Tschiesche M, Krieger M, Bauer A, Mitlehner H, et al. Journal article, Report Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Conference contribution