Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Growth, defects and doping of 3C-SiC on hexagonal polytypes (2017) Yakimova R, Ivanov IG, Vines L, Linnarsson MK, Gällström A, Giannazzo F, Roccaforte F, et al. Journal article, Original article Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers (2017) Schöler M, Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond (2017) Wellmann P Journal article, Review article Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers (2017) Schimmel S, Koch M, Macher P, Kimmel AC, Steigerwald T, Alt N, Schlücker E, Wellmann P Journal article, Original article Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence (2017) Wei Y, Künecke U, Wellmann P, Ou H Conference contribution Thermally Stimulated Luminescence in 6H Fluorescent SiC (2017) Wei Y, Künecke U, Wellmann P, Ou H Conference contribution Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers (2017) Schuh P, Schöler M, Wilhelm M, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging (2017) Häusler J, Schimmel S, Wellmann P, Schnick W Journal article, Original article Low Temperature Photoluminescence of 6H fluorescent SiC (2017) Wei Y, Künecke U, Jokubavicius V, Syväjärvi M, Wellmann P, Ou H Conference contribution 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers (2017) Schuh P, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article