Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019) Salamon M, Arzig M, Uhlmann N, Wellmann P Journal article Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019) Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC (2019) Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann P Journal article Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide (2019) Schöler M, Lederer M, Schuh P, Wellmann P Other publication type Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications" (2019) Wellmann P, La Via F, Jennings M Edited Volume Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup (2019) Arzig M, Salamon M, Uhlmann N, Wellmann P Journal article, Original article An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications (2019) Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, et al. Journal article, Original article Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules (2018) Arzig M, Hsiao T, Wellmann P Journal article, Original article