Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates (2020) Sytnyk M, Yousefi-Amin AA, Freund T, Prihoda A, Götz K, Unruh T, Harreiß C, et al. Journal article Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperatures (2020) Schimmel S, Kobelt I, Heinlein L, Kimmel AC, Steigerwald T, Schlücker E, Wellmann P Journal article Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals (2020) Arzig M, Salamon M, Hsiao TC, Uhlmann N, Wellmann P Journal article On the importance of dislocation flow in continuum plasticity models for semiconductor materials (2020) Nguyen BD, Rausch A, Steiner J, Wellmann P, Sandfeld S Journal article The 50th Anniversary of the German Association for Crystal Growth, DGKK (2020) Danilewsky A, Wellmann P, Miller W Journal article, Editorial Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results (2020) Steiner J, Arzig M, Denisov A, Wellmann P Journal article, Original article Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters (2020) Schöler M, Lederer M, Schuh P, Wellmann P Journal article Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystal (2019) Salamon M, Arzig M, Wellmann P, Uhlmann N Journal article Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules (2019) Ellefsen OM, Arzig M, Steiner J, Wellmann P, Runde P Journal article