Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process (2022) Steiner J, Wellmann P Journal article Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding (2022) Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P Conference contribution In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry (2022) Ihle J, Wellmann P Conference contribution Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers (2022) Steiner J, Nguyen BD, Roder M, Danilewsky A, Sandfeld S, Wellmann P Conference contribution Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide (2022) Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P Conference contribution Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications (2022) Kollmuß M, Köhler J, Ou H, Fan W, Chaussende D, Hock R, Wellmann P Conference contribution In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth (2022) Schimmel S, Salamon M, Tomida D, Kobelt I, Heinlein L, Kimmel AC, Steigerwald T, et al. Conference contribution, Abstract of a poster Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals (2021) Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P Journal article The search for new materials and the role of novel processing routes (2021) Wellmann P Journal article