Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging (2002) Wellmann P, Herro ZG, Straubinger T, Winnacker A Journal article, Original article Analysis of silicon incorporation into VGF-grown GaAs (2002) Birkmann B, Weingärtner R, Wellmann P, Wiedemann B, Müller G Journal article Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements (2002) Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A Journal article On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Impact of source material on silicon carbide vapor transport growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements (2001) Wellmann P, Bushevoy S, Weingärtner R Journal article Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg (2001) Wellmann P Authored book