Prof. Dr.-Ing. Peter Wellmann



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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Analysis of graphitization during physical vapor transport growth of silicon carbide (2004) Wellmann P, Herro ZG, Sakwe A, Masri P, Bogdanov M, Karpov S, Kulik A, et al. Journal article, Original article In-situ Er-doping of SiC bulk single crystals (2004) Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P Journal article, Original article Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC (2003) Weingärtner R, Albrecht A, Wellmann P, Winnacker A Journal article, Original article Determination of doping levels and their distribution in SiC by optical techniques (2003) Wellmann P, Weingärtner R Journal article, Original article Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals (2003) Bickermann M, Weingärtner R, Herro ZG, Hofmann HD, Künecke U, Wellmann P, Winnacker A Journal article, Original article Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC (2003) Weingärtner R, Bickermann M, Herro ZG, Künecke U, Sakwe A, Wellmann P, Winnacker A Journal article, Original article Investigation of mass transport during PVT growth of SiC by 13C labeling of source material (2003) Herro ZG, Wellmann P, Püsche R, Hundhausen M, Ley L, Maier M, Masri P, Winnacker A Journal article, Original article Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling (2003) Wellmann P, Herro ZG, Selder M, Durst F, Püsche R, Hundhausen M, Ley L, Winnacker A Journal article, Original article Optical quantitative determination of doping levels and their distribution in SiC (2002) Wellmann P, Weingärtner R, Bickermann M, Straubinger T, Winnacker A Journal article Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method (2002) Straubinger T, Bickermann M, Weingärtner R, Wellmann P, Winnacker A Journal article