Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability (2005) Sakwe A, Herro ZG, Wellmann P Journal article, Original article Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals (2005) Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P Journal article, Original article High Al-doping of SiC using a modified PVT (M-PVT) growth set-up (2005) Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P Journal article, Original article In situ visualization of SiC physical vapor transport crystal growth (2005) Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, et al. Journal article Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping (2004) Wellmann P, Albrecht A, Künecke U, Birkmann B, Müller G, Jurisch M Journal article On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC (2004) Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Structural defects in SiC crystals investigated by high energy x-ray diffraction (2004) Weißer M, Seitz C, Wellmann P, Hock R, Magerl A Journal article, Original article Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source (2004) Desperrier P, Müller R, Winnacker A, Wellmann P Journal article, Original article